1 transistor 2sd1511 silicon npn epitaxial planer type darlington for low-frequency output amplification n features l forward current transfer ratio h fe is designed high, which is ap- propriate to the driver circuit of motors and printer bammer: h fe = 4000 to 2000. l a shunt resistor is omitted from the driver. l mini power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing. n absolute maximum ratings (ta=25?c) unit: mm parameter collector to base voltage collector to emitter voltage emitter to base voltage peak collector current collector current collector power dissipation junction temperature storage temperature 1:base 2:collector eiaj:scC62 3:emitter mini power type package 4.5 0.1 2.6 0.1 2.5 0.1 0.4max. 1.0 +0.1 ?.2 4.0 +0.25 ?.20 3.0 0.15 1.5 0.1 0.4 0.08 0.5 0.08 1.5 0.1 0.4 0.04 1.6 0.2 45 marking 321 symbol v cbo v ceo v ebo i cp i c p c * t j t stg ratings 100 80 5 1.5 1 1 150 C55 ~ +150 unit v v v a a w ?c ?c n electrical characteristics (ta=25?c) parameter collector cutoff current emitter cutoff current collector to base voltage collector to emitter voltage emitter to base voltage forward current transfer ratio collector to emitter saturation voltage base to emitter saturation voltage transition frequency symbol i cbo i ebo v cbo v ceo v ebo h fe *1 v ce(sat) v be(sat) f t conditions v cb = 25v, i e = 0 v eb = 4v, i c = 0 i c = 100 m a, i e = 0 i c = 1ma, i b = 0 i e = 100 m a, i c = 0 v ce = 10v, i c = 1a *2 i c = 1.0a, i b = 1.0ma *2 i c = 1.0a, i b = 1.0ma *2 v cb = 10v, i e = C50ma, f = 200mhz min 100 80 5 4000 typ 150 max 100 100 40000 1.8 2.2 unit na na v v v v v mhz *2 pulse measurement * printed circuit board: copper foil area of 1cm 2 or more, and the board thickness of 1.7mm for the collector portion marking symbol : p internal connection b c e *1 h fe rank classification rank q r s h fe 4000 ~ 10000 8000 ~ 20000 16000 ~ 40000 marking symbol pq pr ps
2 transistor 2sd1511 p c ta i c v ce v ce(sat) i c v be(sat) i c h fe i c c ob v cb 010 8 26 4 0 2.4 2.0 1.6 1.2 0.8 0.4 ta=25?c i b =200 m a 40 m a 60 m a 80 m a 180 m a 160 m a 140 m a 120 m a 100 m a collector to emitter voltage v ce ( v ) collector current i c ( a ) 0.01 0.1 1 10 0.03 0.3 3 0.01 0.03 0.1 0.3 1 3 10 30 100 i c /i b =1000 25?c 75?c ta=?5?c collector current i c ( a ) collector to emitter saturation voltage v ce(sat) ( v ) 0.01 0.1 1 10 0.03 0.3 3 0.01 0.03 0.1 0.3 1 3 10 30 100 i c /i b =1000 ta=?5?c 25?c 75?c collector current i c ( a ) base to emitter saturation voltage v be(sat) ( v ) 0.01 0.1 1 10 0.03 0.3 3 10 10 2 10 3 10 4 10 5 v ce =10v ta=75?c 25?c ?5?c collector current i c ( a ) forward current transfer ratio h fe 1 3 10 30 100 0 30 25 20 15 10 5 i e =0 f=1mhz ta=25?c collector to base voltage v cb ( v ) collector output capacitance c ob ( pf ) 0 200 160 40 120 80 0 1.2 1.0 0.8 0.6 0.4 0.2 printed circut board: copper foil area of 1cm 2 or more, and the board thickness of 1.7mm for the collector portion. ambient temperature ta ( ?c ) collector power dissipation p c ( w )
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